to-92 plastic-encapsulate transistors 3DD13002b transistor npn features power switching applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.8 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 600 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 100 a,i c =0 6 v i cbo v cb = 610v,i e =0 100 a collector cut-off current i ceo v cb = 405v,i e =0 100 a emitter cut-off current i ebo v eb = 6 v, i c =0 100 a h fe1 v ce = 10 v, i c =200ma 9 40 dc current gain h fe2 v ce = 10 v, i c =0.25ma 5 collector-emitter saturation voltage v ce(sat) i c =200ma, i b =40ma 0.5 v base-emitter saturation voltage v be(sat) i c =200ma, i b =40ma 1.1 v transition frequency f t v ce =10v, i c =100ma f =1mhz 5 mhz fall time t f 0.5 s storage time t s i c =1a, i b1 =-i b2 =0.2a v cc =100v 2.5 s classification of h fe 1 range 9-15 15-20 20-25 25-30 30-35 35-40 to-92 1.emitter 2. collector 3. base dongguan nanjing electronics ltd., b,aug,2012
20 40 60 80 100 120 0 2 4 6 8 10 0.1 1 10 100 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 300 600 900 1200 1 10 100 10 100 1000 110100 1 10 100 0.1 1 10 1 10 100 1000 0 200 400 600 800 1000 1200 0.1 1 10 100 02468101214 0 50 100 150 200 250 300 800 i c f t ?? common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) 800 =5 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 800 800 t a =100 t a =25 =5 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 0.5 3DD13002b typical characteristics i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 10v 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =10v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 10ma 9ma 8ma 7ma 6ma 5ma 2ma 3ma 4ma i b =1ma b,aug,2012 b,aug,2012
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